Effect of the cathodic polarization on structural and morphological proprieties of FTO and ITO thin films
Identifieur interne : 000E55 ( Main/Repository ); précédent : 000E54; suivant : 000E56Effect of the cathodic polarization on structural and morphological proprieties of FTO and ITO thin films
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Abstract
This paper deals on the influence of the potentiodynamic stress on structural and morphological proprieties of fluorine-doped tin oxide (FTO, SnO2:F) and indium tin oxide (ITO, In2O3:Sn) commercial substrates. The potential range is between 0.0 and -2.0 (V/SCE) using an electrolyte with neutral pH. The electrochemical behavior was investigated from cyclic voltammetry technique and chronopotentiometric curves. These electrochemical results were associated to the X-ray diffraction (XRD) spectra and morphology images acquired by scanning electron microscopy (SEM). The main results show that structural and morphological properties of FTO substrates after cathodic polarization remain near constant when compared with ITO films. The ITO substrates show morphological changes after treatment and the XRD patterns indicate the formation of a crystalline structure with In metallic characteristic, at neutral pH.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of the cathodic polarization on structural and morphological proprieties of FTO and ITO thin films</title>
<author><name sortKey="Pla Cid, C C" uniqKey="Pla Cid C">C. C. Pla Cid</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LabSiN, Departamento de Física, Universidade Federal de Santa Catarina, Caixa Postal 476</s1>
<s2>88040-900 Florianópolis, SC</s2>
<s3>BRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Brésil</country>
<wicri:noRegion>88040-900 Florianópolis, SC</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Spada, E R" uniqKey="Spada E">E. R. Spada</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LabSiN, Departamento de Física, Universidade Federal de Santa Catarina, Caixa Postal 476</s1>
<s2>88040-900 Florianópolis, SC</s2>
<s3>BRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Brésil</country>
<wicri:noRegion>88040-900 Florianópolis, SC</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Instituto de Física de São Carlos, Universidade de São Paulo, Caixa Postal 369</s1>
<s2>13560-970 São Carlos, SP</s2>
<s3>BRA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Brésil</country>
<wicri:noRegion>13560-970 São Carlos, SP</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sartorelli, M L" uniqKey="Sartorelli M">M. L. Sartorelli</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LabSiN, Departamento de Física, Universidade Federal de Santa Catarina, Caixa Postal 476</s1>
<s2>88040-900 Florianópolis, SC</s2>
<s3>BRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Brésil</country>
<wicri:noRegion>88040-900 Florianópolis, SC</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0174646</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0174646 INIST</idno>
<idno type="RBID">Pascal:13-0174646</idno>
<idno type="wicri:Area/Main/Corpus">000E35</idno>
<idno type="wicri:Area/Main/Repository">000E55</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Scanning electron microscopy</term>
<term>Thin films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term>
<term>Diffraction RX</term>
<term>Microscopie électronique balayage</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">This paper deals on the influence of the potentiodynamic stress on structural and morphological proprieties of fluorine-doped tin oxide (FTO, SnO<sub>2</sub>
:F) and indium tin oxide (ITO, In<sub>2</sub>
O<sub>3</sub>
:Sn) commercial substrates. The potential range is between 0.0 and -2.0 (V/SCE) using an electrolyte with neutral pH. The electrochemical behavior was investigated from cyclic voltammetry technique and chronopotentiometric curves. These electrochemical results were associated to the X-ray diffraction (XRD) spectra and morphology images acquired by scanning electron microscopy (SEM). The main results show that structural and morphological properties of FTO substrates after cathodic polarization remain near constant when compared with ITO films. The ITO substrates show morphological changes after treatment and the XRD patterns indicate the formation of a crystalline structure with In metallic characteristic, at neutral pH.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0>
</fA01>
<fA03 i2="1"><s0>Appl. surf. sci.</s0>
</fA03>
<fA05><s2>273</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Effect of the cathodic polarization on structural and morphological proprieties of FTO and ITO thin films</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>PLA CID (C. C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SPADA (E. R.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SARTORELLI (M. L.)</s1>
</fA11>
<fA14 i1="01"><s1>LabSiN, Departamento de Física, Universidade Federal de Santa Catarina, Caixa Postal 476</s1>
<s2>88040-900 Florianópolis, SC</s2>
<s3>BRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Instituto de Física de São Carlos, Universidade de São Paulo, Caixa Postal 369</s1>
<s2>13560-970 São Carlos, SP</s2>
<s3>BRA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>603-606</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16002</s2>
<s5>354000504110090880</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>18 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0174646</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied surface science</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>This paper deals on the influence of the potentiodynamic stress on structural and morphological proprieties of fluorine-doped tin oxide (FTO, SnO<sub>2</sub>
:F) and indium tin oxide (ITO, In<sub>2</sub>
O<sub>3</sub>
:Sn) commercial substrates. The potential range is between 0.0 and -2.0 (V/SCE) using an electrolyte with neutral pH. The electrochemical behavior was investigated from cyclic voltammetry technique and chronopotentiometric curves. These electrochemical results were associated to the X-ray diffraction (XRD) spectra and morphology images acquired by scanning electron microscopy (SEM). The main results show that structural and morphological properties of FTO substrates after cathodic polarization remain near constant when compared with ITO films. The ITO substrates show morphological changes after treatment and the XRD patterns indicate the formation of a crystalline structure with In metallic characteristic, at neutral pH.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>XRD</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>03</s5>
</fC03>
<fN21><s1>154</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>
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